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Available online at www.sciencedirect.com
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RAPID COMMUNICATION
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Unraveling ﬁlm transformations and device
performance of planar perovskite solar cells
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Tze-Bin Songa,b, Qi Chena,b, Huanping Zhoua,b, Song Luoa,b,
Yang (Michael) Yanga,b, Jingbi Youa,b, Yang Yanga,b,n
a
Department of Materials Science and Engineering, University of California Los Angeles, Los Angeles, CA
90095, USA
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California NanoSystems Institute, University of California Los Angeles, Los Angeles, CA 90095, USA
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Received 17 December 2014; received in revised form 12 January 2015; accepted 12 January 2015
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KEYWORDS
Abstract
Perovskite;
Photovoltaic;
Transformation;
Secondary phase;
Decomposition
High performance (415%) organometaltrihalide based solar cells have been demonstrated in
recent years to be a promising candidate for low cost photovoltaics and have attracted
signiﬁcant attention in the photovoltaic community. Planar thin ﬁlm perovskite solar cells,
which are more easily fabricated, provide a great platform to investigate the perovskite ﬁlm
properties. Until now, many of the properties of perovskite thin ﬁlms remain unexplored and
the link between ﬁlm properties and device performances is in need of investigation to further
boost the efﬁciencies of these devices. Here, ﬁlm transformation of perovskite materials is
demonstrated as a critical factor to reach high performance in planar heterojunction
CH3NH3PbI3 xClx solar cells. Reaction induced secondary phases can be observed and carefully
controlled by tuning the processing conditions during ﬁlm formation. The properties of
CH3NH3PbI3 xClx ﬁlms are investigated and a possible formation pathway is proposed. It is
shown that the high performance devices are attainable with a small portion of secondary
phases coexisting with CH3NH3PbI3 ﬁlm and power conversion efﬁciencies of up to 14% are
achieved. The correlations between the phases present, device performance and physical
properties are discussed to identify the role of the secondary phases in CH3NH3PbI3 xClx
material.
& 2015 Published by Elsevier Ltd.
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1.
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Introduction
n
Corresponding author at: Department of Materials Science and
Engineering, University of California Los Angeles, Los Angeles, CA
90095, USA.
E-mail address: yangy@ucla.edu (Y. Yang).
Thin ﬁlm solar cells, such as CuInGaSe2 (CIGS), CdTe,
Cu2ZnSnSe2 (CZTS) and amorphous Si (a-Si) have been
developed as promising alternatives to crystalline silicon
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http://dx.doi.org/10.1016/j.nanoen.2015.01.025
2211-2855/& 2015 Published by Elsevier Ltd.
Please cite this article as: T.-B. Song, et al., Unraveling ﬁlm transformations and device performance of planar perovskite solar cells,
Nano Energy (2015), http://dx.doi.org/10.1016/j.nanoen.2015.01.025
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T.-B. Song et al.
solar cells as more cost-effective technologie [1–6]. As a
result of the efﬁcient direct band gap absorption, the
thickness of thin ﬁlm solar cells could be effectively
reduced to sub-micrometer or even hundreds of nanometer
The potential low cost (cents/watt) of solar cells can be
achieved through the combination of reduced material cost
and high device performance [7]. The high performance of
CIGS and other compound absorbers, however, relies on
vacuum based and/or high temperature processes which
would lead to high manufacturing costs and limit the choice
of substrates. In recent years, hybrid organic/inorganic
perovskite absorbers, especially methylammonium lead
halide CH3NH3PbX3 (X = Cl, Br and I)-based, have attracted
signiﬁcant attention as promising materials for thin ﬁlm
solar cells. Extraordinary power conversion efﬁciencies
(PCEs) of over 17% were achieved during the past ﬁve years
and the materials have been demonstrated as capable of
being prepared using a number of low temperature processes, making these materials especially attractive for low
cost and scalable manufacturing of next generation thin ﬁlm
photovoltaic devices [8–11].
Perovskite CH3NH3PbX3-based solar cells have shown to
possess desirable properties such as an extremely high
absorption coefﬁcient, efﬁcient ambipolar transport, and
a tunable direct band gap, allowing them to be excellent
solar absorbers and carrier transporters [12–18]. However,
how to effectively control the material growth, ﬁlm formation, and ﬁlm quality is still under investigation. In previous
works, the morphology, stoichiometry and crystallinity of
these materials were found to affect the device performance signiﬁcantly [19–22]. Deposition techniques, treatments and ﬁlm formation conditions are critical to achieve
high efﬁciency solar cells [23–25]. Dualeh et al. showed that
the depositing a CH3NH3PbI3-xClx precursor onto mesoporous
titanium dioxide (TiO2) structure under proper annealing
temperature can lead to formation of CH3NH3PbI3 perovskite material resulting in reduced pin holes within the ﬁlm
[19]. Eperson et al. demonstrated that the annealing
temperature, ﬁlm thickness and thickness of compact TiO2
layer can inﬂuence the coverage of CH3NH3PbI3 xClx which
would further impact the device performance [20]. These
studies furthered our understanding on the correlation
between ﬁlm formation and device performance. However,
to further improve the device performance, it is crucial to
understand the ﬁlm's properties and the quality of the ﬁlms
from the perspective of phase formation. During the
formation of CH3NH3PbX3 perovskite ﬁlm from the molecular solution, different phases are observed and those phases
coexisting with the CH3NH3PbI3 phase in the ﬁlms are
considered secondary phases. Secondary phases play a
crucial role in the semiconductor materials and could
signiﬁcantly alter the device performance. For example,
the order vacancy compound (OVC) CuIn3Se5 phase in CIGS
improves electrical transport within the n-type cadmium
sulﬁde (CdS) layer [26–28]. On the other hand, the semimetallic phase Cu2Se in CZTS could lead to the formation of
shunt paths and recombination centers and thus deteriorating the device performance [29]. In this paper, the phase
transition during the CH3NH3PbI3 xClx ﬁlm formation was
observed and the secondary phases' effects on the ﬁlm
formation, ﬁlm properties and device performance were
investigated.
2.
2.1.
Experimental section
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Material preparation
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CH3NH3I (MAI) was synthesized by reacting 24 ml of methylamine (33 wt% in absolute ethanol, Sigma) with 10 ml of
hydroiodic acid (HI) (57 wt% in water, Aldrich) in a roundbottom ﬂask at 0 1C for 2 h with stirring. The precipitation
was extracted by putting the solution on a rotary evaporator
and carefully removing the solvent at 50 1C. The raw
product CH3NH3I was re-dissolved in absolute ethanol and
precipitated upon the addition of diethyl ether. After
ﬁltration, the step was subsequently repeated. The solid
was collected and dried at 60 1C in a vacuum oven for 24 h.
The PbCl2, Li-bis(triﬂuoromethanesulfonyl) imide (Li-TFSI)
and tert-butylpyridine (tBP) were purchased from Aldrich.
Spiro-OMeTAD was purchased from Lumtec.
2.2.
Device fabrication
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Low temperature TiO2 solution was prepared as previous
report [30]. The TiO2 solution (3 mg/ml) was spin-coated on
pre-cleaned ITO substrates at 3000 rpm. and then baked
150 1C for 30 min. A 0.73 M perovskite solution was prepared
from PbCl2 and MAI with (1:3 mole ratio) in DMF and spincoated onto the ITO/TiO2 substrate at 2000 rpm. and then
baked at 100 1C for different times inside a dry air glovebox
under 25 ppm H2O. The Spiro-OMeTAD was used as a hole
transporting layer and dissolved in chlorobenzene (180 mg/
ml). The Li-TFSI was dissolved in acetonitrile (170 mg/ml)
and 20 μl tBP. The Li-TFSI solution was added to the SpiroOMeTAD solution at a ratio of 1:40. Then, Li salt doped
Spiro-OMeTAD solution was spin-coated at 2000 rpm. onto
the perovskite layer. Finally, a gold electrode was evaporated onto the hole transport layer. The device area was
deﬁned with shadow mask with an area of 0.114 cm2 for
measurement.
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2.3.
Instruments and characterizations
X-ray diffration (XRD) data were collected on Panalytical
X'Pert Pro X-ray Powder Diffractometer with Cu Kα radiation
(λ = 1.54056 Å). Scanning electron microscopy (SEM) were
performed with ﬁeld-emission electrons using Nova 230
Nano SEM. Time-resolved photoluminescence (TR-PL) using
Picoharp single counting system using 632.8 nm semiconductor laser with a pulse width less than 0.2 ns and with
repetition rate of 1 MHz as excitation source was used for
carrier lifetime measurement. The photovoltaic performance was characterized without any encapsulation under
an AM1.5G ﬁlter at 100 mW/cm2 in air using Newport Oriel
92192 Solar Simulator and the intensity was calibrated using
a certiﬁed silicon photodiode.
3.
Results and discussion
The CH3NH3PbI3 xClx perovskite absorber was deposited using a
one-step method onto the tin doped indium oxide (ITO)/TiO2
substrates by spin coating from a 1:3 molar ratio solution of
PbCl2 and CH3NH3I (MAI) in dimethyl foramide (DMF) and
Please cite this article as: T.-B. Song, et al., Unraveling ﬁlm transformations and device performance of planar perovskite solar cells,
Nano Energy (2015), http://dx.doi.org/10.1016/j.nanoen.2015.01.025
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Unraveling ﬁlm transformations and device performance of planar perovskite solar cells
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Fig. 1 X-ray diffraction (XRD) patterns of CH3NH3PbI3 xClx
ﬁlm formation. The phase transformation was observed from
annealing times of 40 min to 110 mins. The inset is the enlarged
XRD result within 5–201.
annealed at 100 1C, which is reported to promote good ﬁlm
coverage and can provide sufﬁcient energy for the perovskite
phase formation (Details of the ﬁlm preparation are shown in
experimental section) [19]. The CH3NH3PbI3 is most commonly
prepared by thermal annealing at 80100 1C. Annealing temperatures below this range (between 60 and 80 1C) would result
in slow transformation rates, while temperatures lower than
60 1C could be too low to drive the transformation. Higher
annealing temperatures (4120 1C) would accelerate the
decomposition of CH3NH3PbI3 and induce a poor ﬁlm coverage
[19,20]. Thus, the temperature was ﬁxed at 100 1C to investigate the phase transformation at different annealing times. The
phase transformation was characterized by x-ray diffraction
(XRD) with results shown in Fig. 1. The peak at 2θ=7.4 degrees
arises from the precursor complex and those of 2θ=12.71, 14.21
and 15.61 corresponds to PbI2 (0 0 1), CH3NH3PbI3 (1 1 0) and
CH3NH3PbCl3 (1 0 0) orientation respectively (used as signature
peaks for tracking phase transformation and indicated by circle,
triangle, diamond and square in Fig. 1). All observed peaks
came from the aforementioned four phases and no extra phases
were present according to the observation of the diffraction
patterns. As seen in the XRD measurement, the precursor
complex phase almost disappeared at 70 min annealing time
which indicated the nearly complete transformation from
precursor to solid phases. Surprisingly a certain amount of
PbI2phase was observed even at 40 min annealing, which is
before the complete transformation as identiﬁed by the
disappearance of the precursor complex peak at 2θ=7.41. This
indicated that PbI2 phase formed under this annealing temperature easily even for less than 40 min (XRD pattern at 25 min
annealing time shown in the Figure S1) and it was deduced to
come from the ion exchange between PbCl2 and MAI. The
generated PbI2 reacted meanwhile with MAI to form
CH3NH3PbI3, and PbCl2 reacted with CH3NH3Cl (MACl), which
was generated from PbCl2 and MAI, to form the CH3NH3PbCl3
phase. The PbI2 peaks are still present even with the incorporation of excess MAI into the precursor solution, as shown in
Figure S2. The result indicated that the PbI2 formed at an early
stage and was later transformed into CH3NH3PbI3perovskite
phase by reacting with MAI. Except forCH3NH3PbI3, other phases
are hardly seen from full XRD spectrum because of the
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extremely small amounts of those phases. In order to evaluate the relative amount of the precursor complex, PbI2
andCH3NH3PbCl3 phase present during the phase change, the
area ratio of the precursor complex peak at 2θ=7.41, PbI2
(0 0 1) and CH3NH3PbCl3 (1 0 0), as relative to the CH3NH3PbI3
(1 1 0) peak were calculated using Gaussian ﬁtting. At 55 min
annealing time, the ratio of precursor complex, CH3NH3PbCl3
and PbI2 to CH3NH3PbI3 were 0.21%, 1.79% and 0.16% respectively. When the annealing time was increased to 70 min, the
amount of the precursor complex and CH3NH3PbCl3 phase
reduced to 0.05% and 1.25% and the PbI2 phase increased to
0.53%. It can be assumed that the CH3NH3PbI3 phase formation
was nearly complete and the increase in the relative amount of
PbI2 phase mainly came from the CH3NH3PbI3 phase decomposition and precursor reaction. Moreover, the reaction of PbCl2
with MAI to generate PbI2 caused the depletion of PbCl2 which
in turn would facilitate the decomposition of CH3NH3PbCl3
phase reﬂected by the deceasing CH3NH3PbCl3 peak ratio. After
90 min annealing, the area ratio of the PbI2 (0 0 1) peak relative
to the CH3NH3PbI3 (1 1 0) peak increased up to 1.70%. The ﬁlms
with longer annealing time, for example 110 min, generated
more PbI2 phase and less CH3NH3PbCl3 phase. It is noted that
the secondary phases will coexist in the solution processed
CH3NH3PbI3 xClx ﬁlm and it would be a challenge to obtain a
pure CH3NH3PbI3 phase. Summarizing the information obtained
from XRD characterization on the solution processed
CH3NH3PbI3 xClx phase transformation, possible transformation
pathways are proposed in Fig. 2. Table 1.
At path (1), PbCl2 and MAI in the DMF reacted to form PbI2
and MACl while coexisting with MAI and a possible precursor
complex. During annealing at path (2), PbI2 reacts with MAI
and PbCl2 reacts with MACl to form CH3NH3PbI3and
CH3NH3PbCl3. The CH3NH3PbI3 phase formed from path
(2) can decompose under thermal annealing at 100 1C to
generate PbI2 phase, CH3NH2 and HI at path (3). The excess
MAI can continue to react with PbCl2 to generate PbI2,
facilitating the decomposition of the CH3NH3PbCl3phase (4).
When the excess MAI depleted, the decomposition mechanism of CH3NH3PbI3 and CH3NH3PbCl3 phases dominates, and
the relative amount of PbI2 phase rose gradually. This
proposed pathway takes into account both results from
the XRD characterization here and previous reports
[19,31,32].
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Fig. 2 Possible transformation pathway of solution processed CH3NH3PbI3 xClx ﬁlm: (1) PbCl2 +3CH3NH3I-PbI2 +CH3NH3I
+2CH3NH3Cl; (2) PbI2 +CH3NH3I-CH3NH3PbI3; PbCl2 +CH3NH3ClCH3NH3PbCl3; (3) CH3NH3PbI3-PbI2 +CH3NH2 +HI; (4) CH3NH3PbCl3
+3CH3NH3I-(1)+CH3NH3Cl.
Please cite this article as: T.-B. Song, et al., Unraveling ﬁlm transformations and device performance of planar perovskite solar cells,
Nano Energy (2015), http://dx.doi.org/10.1016/j.nanoen.2015.01.025
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Table 1 The averaged four device parameters of VOC,
JSC, FF, and Eff with varying annealing time.
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40 min
55 min
70 min
90 min
110 min
VOC(V)
JSC (mA/cm2)
FF (%)
Eff (%)
0.978
1.018
1.033
1.038
1.024
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Fig. 3 Device performance of the CH3NH3PbI3 xClx ﬁlms with
varying annealing times (a) the summarized device parameters.
(b) Typical current density–voltage characteristics for 40 min,
70 min and 110 min annealing time.
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The effects of these secondary phases present in
CH3NH3PbI3 ﬁlm were characterized based on device performance, ﬁlm morphologies and carrier lifetime tests.
CH3NH3PbI3 ﬁlms with different annealing conditions were
prepared, while lithium slat doped Spiro-OMeTAD was
employed as the hole transport layer and ﬁnally gold (Au)
was evaporated as the back electrode. Current density–
voltage (J–V) curves were measured by reverse bias scan
under 1 sun AM 1.5G illumination and device parameters are
shown in Fig. 3a. Typical J–V curves for the three conditions
are shown in Fig. 3b, where the perovskite ﬁlm were
obtained from 40, 70 and 110 min annealing, corresponding
to the early formation, near completed and the overannealing stages. The highest averaged PCE was achieved
for the perovskite ﬁlm annealed for 70 min and it corresponds to the near completed stage where the smallest
amount of secondary phases is present (less than 2% for the
sum of the four speciﬁc peak areas corresponding to the
four phases). At annealing times shorter or longer than
70 min, the device performances were reduced. From the
summarized device parameters chart in Fig. 3a, perovskite
ﬁlms with 40 min annealing time exhibited poor open circuit
voltage (VOC) and slightly lower ﬁll factor (FF).When
increasing the annealing time to 55 min, the VOC and FF
were improved by 4% and 1.5% respectively. During this
period, the total amount of the secondary phases was
reduced from 4.3% to 2.1%. In addition to the decrease in
the amount of the precursor complex and CH3NH3PbCl3
phase, the gradual increase of PbI2 phase in the ﬁlm at
70 min annealing together attributed to an improved VOC
and FF, but a slightly lower short circuit current (JSC). The
PbI2 phase was reported to improve the device performance
by passivating the grain boundaries which generally worked
as recombination centers [32,33]. However, excessive PbI2
phase will reduce the light absorption efﬁciency in the ﬁlm
due to the larger band gap of PbI2 (2.4 eV) which contributed to the lower JSC [19]. After 90 min of annealing, the
percentage of the secondary phases present in the ﬁlm rose
to 4.0% mainly due to an increase of PbI2 phase. The VOC of
the devices were higher in comparison to that of annealing
for 40 min where a similar amount of secondary phases was
present, although with different compositions (more precursor phase and less PbI2). Thus the precursor phase could
be the main reason behind the lower VOC of the device at
40 min annealing time. The PCEs of those devices with over
90 min annealing are still low, however, mainly limited by
the low JSC value (Device performance after 190 min of
annealing is shown in Figure S3). While the devices obtained
from perovskite ﬁlm with 70 min of annealing exhibited high
average PCEs, those with 55 min of annealing exhibited the
highest averaged JSC among all the conditions. Therefore
controlling the PbI2 phase within 0.5% the amount of
CH3NH3PbI3 and tuning the amounts of precursor and
CH3NH3PbCl3 phases in the perovskite ﬁlms are important
to simultaneously achieve efﬁcient light absorption, effective grain boundary passivation and reduced recombination
centers.
Furthermore, the CH3NH3PbI3 xClx ﬁlm morphologies during
the transformation were characterized by scanning electron
microscopy (SEM) as shown in Fig. 4. A high surface coverage
(495%) of CH3NH3PbI3 xClx ﬁlms were achieved with thermal
annealing at 100 1C within 70 min of annealing which reduced
the possibility of shunt paths formation thereby reducing
leakage current in the solar cells. The high surface coverage
obtained within 70 min of annealing in this study indicates that
surface coverage was not a major factor for the changes in
device performance instead the evolution of the secondary
phases played a vital role in device performance. When the
annealing time exceeds 70 min, bright spots and voids between
grain boundaries appeared, which were deduced to be coming
from the decomposition of CH3NH3PbI3 phase into PbI2 phase
and the loss of CH3NH3PbCl3 phase. At annealing times of
110 min or longer, the surface coverage gradually decreased
and the original conformal ﬁlms were broken into small grains
and branches (SEM images with different scales shown in
Figure S4) and more pronounced void formation was observed
Please cite this article as: T.-B. Song, et al., Unraveling ﬁlm transformations and device performance of planar perovskite solar cells,
Nano Energy (2015), http://dx.doi.org/10.1016/j.nanoen.2015.01.025
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Fig. 4 SEM images of perovskite ﬁlm morphologies annealing at 100 1C for (a) 40 min (b) 55 min (c) 70 min (d) 90 min and
(e) 110 min.
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between the crystal grains. Such changes in the microstructure
may lead to direct contact between the electron and hole
transporting layers, leading to an increase in the leakage
current of the devices was increased due to these shunt paths
formation. In addition, an increase in voids indicates a less
effective absorption area within the absorber. Thus, a decrease
in device performance was attributed to the combined effects
of changes in the amount of PbI2 phase and changes in the thin
ﬁlm morphology at longer annealing times.
Time-resolved photoluminescence (TRPL) measurements
with a 632 nm wavelength and 1 MHz frequency pulsed laser
were performed on TiO2/CH3NH3PbI3-xClx ﬁlms to best simulate
the device structure at room temperature and the results are
shown in Fig. 5 measuring the peak emission at 775 nm. The TRPL data was ﬁtted by two exponential decay curves and the
minority carrier lifetime (τ) of the ﬁlms obtained at different
conditions were 0.44 μs, 0.89 μs and 0.53 μs corresponding to
annealing times of 40 min, 70 min and 110 min respectively.
Longer minority carrier
pﬃﬃﬃﬃﬃlifetime is associated with longer
diffusion length (LD ¼ Dτ), D is the diffusion coefﬁcient of
carriers and reduced carrier recombination rates. For ﬁlms
annealed for less than 70 min, the precursor phase and other
secondary phases can act as recombination centers in the
material or induce stronger interface recombination with the
hole transport layer or electron transport layer which would
cause the VOC to drop signiﬁcantly. It is interesting to note that
the shorter carrier lifetime did not inﬂuence the JSC in the
device performance, e.g. the absorber obtained at 40 min. This
is the ﬁrst time to our knowledge that this effect is observed in
the CH3NH3PbI3 xClx perovskite solar cells. The JSC reﬂects the
collection efﬁciency of the p–i–n junction relative to the total
number of carriers generated by light absorption. Comparing
the 40 min and 70 min annealed ﬁlms, the total amount of
generated charges does not vary signiﬁcantly possibly because
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Fig. 5 Time-resolved photoluminescence of perovskite ﬁlm
with (a) 40 min (b)70 min (c) 110 min on TiO2 substrates at room
temperature.
most of the CH3NH3PbI3 phase was formed by 40 min and the
electrical ﬁeld across the perovskite layer can sweep the
photogenerated carriers rapidly even with the presence of
secondary phases. When the ﬁlms were annealed at longer
times (4110 min), the PbI2 phase became the dominant
secondary phase in the ﬁlms and the perovskite gains were
segmented according to SEM characterization. The shorter τ
can be directly correlated with the decrease in VOC of the
device performance which in turn is due to the increase of
secondary phases and extent of carrier recombination. Compared with the previous studies based on vapor-assisted solution
process (VASP) of CH3NH3PbI3 perovskite solar cells, Chen et al.
Please cite this article as: T.-B. Song, et al., Unraveling ﬁlm transformations and device performance of planar perovskite solar cells,
Nano Energy (2015), http://dx.doi.org/10.1016/j.nanoen.2015.01.025
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showed that over a certain amount of PbI2 formation caused the
minority carrier lifetime slightly decreased. Moreover, it did not
change the ﬁlm morphologies signiﬁcantly [33]. However, in the
one-step solution processed CH3NH3PbI3 xClx, the phase transformation resulted in different ﬁlm morphologies and the
consequently varying device performances. Moreover, the TRPL results correspond with previous reports using impedance
spectroscopic measurement that showed short electron lifetime
resulted from incomplete reaction between PbI2 and MAX, and
from excessive PbI2 formation in mesoporous structured
CH3NH3PbI3 xClx solar cells [19] The effects on minority carrier
lifetime and morphologies are in good agreement with the
current-voltage characteristic of the devices and those ﬁlms
with proper annealing time (55–70 min) exhibited decent
minority carrier lifetime (40.8 μs) and ﬁlm coverage.
4.
Conclusions
In this paper, the evolution of various phases was shown
through a series of characterizations for the phase transformation of perovskite thin ﬁlms based on solution processed
CH3NH3PbI3 xClx. XRD results indicated that multiple secondary phases, including a precursor complex, PbI2, and
CH3NH3PbCl3 formed during the perovskite formation. The
device performance showed that less secondary phases will
result in better PCEs, while it is a challenge to achieve pure
CH3NH3PbI3 phase from the single step co-deposition process
from PbCl2 and MAI precursors. The SEM and TR-PL results were
consistent with the device performance measurements and
further elucidated the relation between phase transformation
and device performance. Based on these results, possible
reaction pathways were proposed to unravel the evolution of
phases as the ﬁlm formation occurred during the annealing
process. The phase transformation based on different ﬁlm
preparation processes, e.g. two step solution process, vacuum
deposition, and co-deposition solution process from PbI2 precursor instead of PbCl2 should be further studied to address the
Cl species effect and to improve device performance. We
believe that the present understanding of the phases' effects
will facilitate the rational design of perovskite materials and
expedite the development of this emerging photovoltaic
technology.
45
Acknowledgments
47
The authors gratefully acknowledge the ﬁnancial support
from Air Force Ofﬁce of Scientiﬁc Research (Grant number:
FA9550-12-1-0074, Program Manager Dr. Charles Lee).
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Appendix A.
Supporting information
Supplementary data associated with this article can be
found in the online version at http://dx.doi.org/10.1016/
j.nanoen.2015.01.025.
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Please cite this article as: T.-B. Song, et al., Unraveling ﬁlm transformations and device performance of planar perovskite solar cells,
Nano Energy (2015), http://dx.doi.org/10.1016/j.nanoen.2015.01.025
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Tze-Bin Song is a Ph.D. candidate at the
University of California Los Angeles (UCLA),
in Materials Science and Engineering under
the supervision of Prof. Yang Yang. He
received his B.S. degree from National
Tsing-Hua University, Taiwan, in 2007 and
M.S. degree from University of Florida in
2010, both in Materials Science and Engineering. His research interests include
development of thin ﬁlm solar cells, transparent electrodes and material/device
characterizations. During his Ph.D. studies, he had an internship
in International Business Machines, T. J. Watson, NY, where he
participated in developing the advanced integration technique.
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Dr. Qi Chen received his Ph.D degree in
Materials Science and Engineering from
University of California at Los Angeles
(UCLA) in the year 2012. Now, he is working
as a postdoc fellow in California Nanosystem Institute (CNSI) of UCLA. And his
research focuses on hybrids materials, polymer blends for various applications, such as
Photovoltaics, sensors, detectors etc.
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Dr. Huanping Zhou received her Ph.D degree
in Inorganic Chemistry from Peking University in the year 2010. Now, she is working as
a postdoc fellow in Prof. Yang Yang's lab in
UCLA. Her research focuses on nanomaterials, thin ﬁlms and optoelectronics, etc.
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Yang (Michael) Yang received B.E.in Electrical Engineering from Zhejiang University, China
in 2009. He was a research intern between
2009 and 2010 at institute of Chemistry,
Chinese Academy of Sciences (ICCAS), under
the supervision of Prof. Yongfang Li. He is now
a PhD Candidate in Prof. Yang Yang's group, in
the Department of Materials Science and Engineering at UCLA. His research interests include
organic and organic-inorganic hybrid optoelectronic device and their spectroscope study.
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Dr. Jingbi You is a postdoctoral researcher
in Prof. Yang Yang's lab at University of
California, Los Angeles. He got his PhD from
Chinese Academy of Science, Institute of
Semiconductors. His research interests
include organic solar cells, perovskite solar
cells and plasmonics. He has published more
than 40 pre-reviewed Journals.
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Yang Yang received his M.S. and Ph.D. in
Physics and Applied Physics from the University of Massachusetts, Lowell in 1988 and
1992, respectively. Before he joined UCLA
in 1997, he served as the research staff in
UNIAX (now DuPont Display) from 1992 to
1996. Yang is now the Carol and Lawrence
E. Tannas Jr Endowed Chair Professor of
Materials Science at UCLA. He is also the
Fellow of SPIE, RSC and the Electromagnetic
(EM) Academy. He is an expertise in the
ﬁelds of organic, inorganic and organic/inorganic hybrid electronics
and the development and fabrication of related devices, such as
photovoltaic cells, LEDs, transistor and memory devices.
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Please cite this article as: T.-B. Song, et al., Unraveling ﬁlm transformations and device performance of planar perovskite solar cells,
Nano Energy (2015), http://dx.doi.org/10.1016/j.nanoen.2015.01.025