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HFA50PA60C
Vishay High Power Products
HEXFRED®
Ultrafast, Soft Recovery Diode, 2 x 25 A
FEATURES
•
•
•
•
•
•
Base
common
cathode
2
Ultrafast recovery
Ultrasoft recovery
Very low IRRM
Very low Qrr
Specified at operating conditions
Designed and qualified for industrial level
BENEFITS
TO-247AC
1
3
Anode
Anode
2
1
2
Common
cathode
•
•
•
•
•
Reduced RFI and EMI
Reduced power loss in diode and switching transistor
Higher frequency operation
Reduced snubbing
Reduced parts count
DESCRIPTION
HFA50PA60C is a state of the art center tap ultrafast
recovery diode. Employing the latest in epitaxial construction
and advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
With basic ratings of 600 V and 25 A per leg continuous
current, the HFA50PA60C is especially well suited for use as
the companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED® product line features
extremely low values of peak recovery current (IRRM) and
does not exhibit any tendency to “snap-off” during the
tb portion of recovery. The HEXFRED features combine to
offer designers a rectifier with lower noise and significantly
lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED HFA50PA60C is ideally
suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.
PRODUCT SUMMARY
VR
600 V
VF at 25 A at 25 °C
1.7 V
IF(AV)
2 x 25 A
trr (typical)
23 ns
TJ (maximum)
150 °C
Qrr (typical)
112 nC
dI(rec)M/dt (typical) at 125 °C
160 A/µs
IRRM (typical)
4.5 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Cathode to anode voltage
Maximum continuous forward current
per leg
per device
IF
Single pulse forward current
IFSM
Maximum repetitive forward current
IFRM
Maximum power dissipation
PD
Operating junction and storage temperature range
Document Number: 93096
Revision: 29-Jul-08
TEST CONDITIONS
VR
TC = 100 °C
MAX.
UNITS
600
V
25
50
225
A
100
TC = 25 °C
150
TC = 100 °C
60
TJ, TStg
For technical questions, contact: diodes-tech@vishay.com
- 55 to + 150
W
°C
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HFA50PA60C
Vishay High Power Products
HEXFRED®
Ultrafast, Soft Recovery Diode, 2 x 25 A
ELECTRICAL SPECIFICATIONS PER LEG (TJ = 25 °C unless otherwise specified)
PARAMETER
Cathode to anode
breakdown voltage
SYMBOL
VBR
TEST CONDITIONS
IR = 100 µA
IF = 25 A
Maximum forward voltage
VFM
IF = 50 A
See fig. 1
IF = 25 A, TJ = 125 °C
VR = VR rated
MIN.
TYP.
MAX.
600
-
-
-
1.3
1.7
-
1.5
2.0
-
1.3
1.7
UNITS
V
-
1.5
20
-
600
2000
See fig. 3
-
55
100
pF
Measured lead to lead 5 mm from package body
-
12
-
nH
UNITS
Maximum reverse
leakage current
IRM
Junction capacitance
CT
VR = 200 V
Series inductance
LS
TJ = 125 °C, VR = 0.8 x VR rated
See fig. 2
µA
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
Reverse recovery time
See fig. 5, 10
Peak recovery current
See fig. 6
Reverse recovery charge
See fig. 7
Peak rate of fall of recovery
current during tb
See fig. 8
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
-
23
-
trr
IF = 1.0 A, dIF/dt = 200 A/µs, VR = 30 V
trr1
TJ = 25 °C
-
50
75
trr2
TJ = 125 °C
-
105
160
IRRM1
TJ = 25 °C
IRRM2
TJ = 125 °C
Qrr1
TJ = 25 °C
-
4.5
10
IF = 25 A
-
8.0
15
dIF/dt = 200 A/µs
-
112
375
-
420
1200
VR = 200 V
ns
A
nC
Qrr2
TJ = 125 °C
dI(rec)M/dt1
TJ = 25 °C
-
250
-
dI(rec)M/dt2
TJ = 125 °C
-
160
-
MIN.
TYP.
MAX.
UNITS
-
-
300
°C
-
-
0.83
-
-
0.42
A/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Lead temperature
Junction to case,
single leg conducting
Junction to case,
both legs conducting
SYMBOL
Tlead
TEST CONDITIONS
0.063" from case (1.6 mm) for 10 s
RthJC
K/W
Thermal resistance,
junction to ambient
RthJA
Typical socket mount
-
-
40
Thermal resistance,
case to heatsink
RthCS
Mounting surface, flat, smooth and greased
-
0.25
-
-
6.0
-
g
-
0.21
-
oz.
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf · in)
Weight
Mounting torque
Marking device
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Case style TO-247AC
For technical questions, contact: diodes-tech@vishay.com
HFA50PA60C
Document Number: 93096
Revision: 29-Jul-08
HFA50PA60C
HEXFRED®
Vishay High Power Products
Ultrafast, Soft Recovery Diode, 2 x 25 A
10000
TJ = 150°C
1000
100
100
TJ = 125°C
10
1
0.1
TJ = 25°C
0.01
TJ = 150°C
0
200
T = 125°C
400
600
Reverse Voltage - V R (V)
J
T = 25°C
J
Fig. 2 - Typical Reverse Current vs.
Reverse Voltage (Per Leg)
10
1000
A
TJ = 25°C
100
1
0.6
1.0
1.4
1.8
2.2
2.6
Forward Voltage Drop - V FM (V)
10
1
10
100
1000
Reverse Voltage - V R (V)
Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous
Forward Current (Per Leg)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
(Per Leg)
Thermal Response (Z thJC )
1
D = 0.50
0.20
0.1
0.01
0.00001
0.10
PDM
0.05
t1
0.02
0.01
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
Document Number: 93096
Revision: 29-Jul-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
3
HFA50PA60C
Vishay High Power Products
HEXFRED®
Ultrafast, Soft Recovery Diode, 2 x 25 A
1400
140
VR = 200V
TJ = 125°C
TJ = 25°C
I F = 50A
I F = 25A
120
1200
I F = 10A
I F = 50A
100
1000
80
800
60
600
40
400
I F = 25A
I F = 10A
20
200
VR = 200V
TJ = 125°C
TJ = 25°C
0
100
di f /dt - (A/µs)
1000
Fig. 5 - Typical Reverse Recovery Time vs.
dIF/dt (Per Leg)
30
0
100
di f /dt - (A/µs)
1000
Fig. 7 - Typical Stored Charge vs. dIF/dt (Per Leg)
10000
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
25
I F = 50A
I F = 50A
I F = 25A
20
I F = 25A
I F = 10A
I F = 10A
15
1000
10
5
0
100
di f /dt - (A/µs)
1000
Fig. 6 - Typical Recovery Current vs. dIF/dt (Per Leg)
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100
100
1000
di f /dt - (A/µs)
Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt (Per Leg)
For technical questions, contact: diodes-tech@vishay.com
Document Number: 93096
Revision: 29-Jul-08
HFA50PA60C
HEXFRED®
Vishay High Power Products
Ultrafast, Soft Recovery Diode, 2 x 25 A
VR = 200 V
0.01 Ω
L = 70 µH
D.U.T.
dIF/dt
adjust
D
IRFP250
G
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
dI(rec)M/dt (5)
0.75 IRRM
(1) dIF/dt
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Document Number: 93096
Revision: 29-Jul-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
5
HFA50PA60C
Vishay High Power Products
HEXFRED®
Ultrafast, Soft Recovery Diode, 2 x 25 A
ORDERING INFORMATION TABLE
Device code
HF
A
50
PA
60
C
-
1
2
3
4
5
6
7
1
-
HEXFRED® family
2
-
Process designator: A = Subs. electron irradiated
B = Subs. platinum
3
-
Current rating (50 = 50 A)
4
-
Package outline (PA = TO-247, 3 pins)
5
-
Voltage rating (60 = 600 V)
6
-
Configuration (C = Center tap common cathode)
7
-
None = Standard production
PbF = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
http://www.vishay.com/doc?95223
Part marking information
http://www.vishay.com/doc?95226
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For technical questions, contact: diodes-tech@vishay.com
Document Number: 93096
Revision: 29-Jul-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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