NOODLES NanOdevice mODeling for Low powEr applicationS Coordinateur: IMEP-LAHC

NOODLES
NanOdevice mODeling
for Low powEr applicationS
Coordinateur: IMEP-LAHC
Partenaires: IEMN, INAC, IM2NP, LETI, STM
Objectives
http://noodles.minatec.grenoble-inp.fr/
Self-heating effects in Si nanowire FETs
Preliminary results
Electron-phonon scattering in single dopant
nanowire FETs
10
-5
10-6
10
VD
4
Ballistic
all phonons
only optical
only acoustic
= 0.1V
3
-7
A
10
ID(mA)
1. Evaluation of self-heating effects and hot-carrier
transport
2. Realistic description of extra-channel parasitic
effects (access resistances and capacitances)
3. Assessment of III-V semiconductors as alternative
materials to Si
4. Analytical equations for compact modeling
5. Comparison with characterization data
 Self-consistent electro-thermal simulation of SiNWs
 Self-heating effects are enhanced by surface
roughness
M. Pala et al., IWCE (2014)
ID(A)
• To develop predictive multi-scale simulations and
efficient semi-analytical models ranging from fullquantum to semi-classical approaches
• To identify the optimal choice of device architecture
(nanowires, FinFETs, FDSOI), channel material (sSi,
SiGe, III-V) and device operating principle
(MOSFET, Tun-FET) for the best
performance/consumption trade-off
• Scientific tasks:
2
-8
C
1
10-9
B
10-10
0
0.1
0.2
0.3
VG(V)
0.4
0.5
0
 Acoustic phonons suppress the hysteresis
 Optical phonons generate assisted tunneling
H. Carrillo-Nunez et al., JAP 116, 164505 (2014)
Hole mobility in Ge/Si core/shell nanowires
Electron and hole scattering in FDSOIs
Si (1 nm)
Ge
 The shell acts as a barrier for holes and compresses Ge
 Strain promotes light holes
 Huge enhancement of the mobility induced by the shell
J. Li et al., submitted to APL
 FDSOI technologies from STMicroelectronics
 Simulation of main scattering mechanisms
 Calibration with experiments
Band structure of III-V thin films
V. H. Nguyen et al., IEEE TED 61, 3096 (2014)
Next developments
•
 Calibration of non-parabolic correction of effective
mass, based on tight-binding simulations
 Next step: fast carrier mobility calculations (Kubo)
G. Mugny et al., submitted to ULIS (2015)
CONTACT
Marco Pala, CR au CNRS
marco.pala@imep.grenoble-inp.fr
•
•
3D Poisson-NEGF-heat equation package with
results of atomistic simulations
Analysis of the effect of the shape and doping
profile in source and drain
Simulation of ring oscillators with the analytical
models developed in NOODLES