MARX GENERATOR FOR THE NEW HRR PULSE POWER SUPPLY M.J. Barnes and L. Redondo (Lisbon Superior Engineering Institute, Portugal) 13/05/2014 CLIC RF Breakdown Meeting 1 Luís Redondo (lmredondo@deea.isel.ipl.pt) Some highlights: • PhD in Electric and Computing Engineering, from the Technical University of Lisbon, Portugal; • Master degree in Nuclear Physics, Faculty of Sciences from the University of Lisbon; • Coordinator Professor, Lisbon Engineering Superior Institute; • Currently supervising 4 PhD students and 6 Masters students; • Elected member of the IEEE Nuclear and Plasma Sciences Society NPSS, Standing Technical Committee for Pulsed Power Science and Technology, PPS&T, from 2011 to 2016; • Five Technology and Science Portuguese Foundation grants, totalling €157k (Sept. 2008 till March 2014): main goal of this project was to develop a solid‐state modulator with energy recovery for the CERN ISOLDE facility; • Luis Redondo, Fernando A. Silva, in Muhammad Rashid et al, editors: Power Electronics Handbook 3ed, 2010, Butterworth‐Hinemann Publishing, Elsevier, ISBN # 9780123820365, chapter 26, pp 669‐710; • Considerable experience/expertise in Power Electronics and Marx Generators; • Co‐founder, in 30 November 2011, of the company Energy Pulse Systems, www.energypulsesystems.com, which develops, assembles and sells solid‐state modulators for various (normally industrial) applications. 13/05/2014 CLIC RF Breakdown Meeting 2 Present HRR System Supply Section d.c. spark system . PFL: Td=2000ns Charging Resistor Z0=50W 4k7 W Pulse Generator Section CT: Bergoz: Fast Switch: CT-D0.5-B Coax Cable: Behlke: Z0=50W HTS-181-25-B 12kV Matching Resistor 50W Diode Filter capacitor 4.7nF Matching resistor 50W Sample voltage without BD (right) and measured current following BD at 12 kV (left) The measured voltage rise-time is less than 55 ns (10% - 90%) and the voltage reduces below 1% of the applied voltage within 100 µs . Bleed resistor 80kW tip Sample Reliability issues: occasional failure of Behlke switch. Probably due to turning off high current following a BD [trigger to switch-on is increased in duration for 3 µs from the instant of a BD – but a turn-off command can have been sent ≤200 ns before the BD …..]. Limitations – no active pull down at present (23 µs fall time-constant 250 ns to 99%: 0.9930=0.74); system could be modified to include active pulldown, but same reliability issues – so better to explore other possibilities (e.g. Marx Generator) The measured current has a 2 µs "flat top" of ~120A and a rise time of 14 ns (10% - 90%). The estimated inductance, based on the 14 ns rise-time, is approximately 320 nH. 13/05/2014 CLIC RF Breakdown Meeting 3 Principle of Marx Generator (1) A Marx generator is an electrical circuit first described by Erwin Otto Marx in 1924. Its purpose is to generate a high-voltage pulse from a low-voltage DC supply. The circuit generates a high-voltage pulse by charging a number of capacitors in parallel, then subsequently connecting them in series. This is illustrated below for a 5 stage Marx. 1a) All the odd numbered MOSFETs/IGBTs (i.e. M1, M3, M5, …) are off. 1b) The capacitors (C1, C2 , … C5) are charged in parallel, from Vdc, by turning on all the even numbered MOSFETs/IGBTs (i.e. M2, M4, M6, …) [Vmarx ≈ 0 V]: Out+ D1 D2 D3 M1 + Vdc - D4 M3 D5 M5 M7 M9 gate1 C1 C2 M2 C3 M4 C4 M6 VMarx C5 M8 M10 gate2 Stored energy: 13/05/2014 1 nCnVdc2 2 CLIC RF Breakdown Meeting 4 Principle of Marx Generator (2) The circuit generates a high-voltage pulse by charging a number of capacitors in parallel, then subsequently connecting them in series. This is illustrated below for a 5 stage Marx. 2a) Capacitors C1, C2 , … C5 have been charged to Vdc in step (1b). All the even numbered MOSFETs/IGBTs (i.e. M2, M4, M6, …) are then turned off. 2b) All the odd numbered MOSFETs/IGBTs (i.e. M1, M3, M5, …) are then turned on, to connect the capacitors in series. VMARX ≈ 5Vdc Out+ D1 D2 D3 M1 + Vdc - D4 M3 D5 M5 M7 M9 gate1 C1 C2 M2 C3 M4 C4 M6 VMarx C5 M8 M10 gate2 Load voltage: VMarx nVdc 13/05/2014 CLIC RF Breakdown Meeting 5 Example of Each Stage MC7805CDTG ON Semiconductor +15 V The following circuit has been implemented, by Luis Redondo, using MOSFETs (in each charge stage [M2] and pulse stage [M1] two parallel MOSFETs are used). 1 7805 IN OUT +5 V 3 GND 2 330nF 330nF GND2 In+ 0.1uF AVAGO Technologies + 4 DATA Optic fibre 2 +5V 3 2 HFBR-2521Z GND 1 DATA + GND2 1 VDD VDD 2 IN OUT TC1410 OUT 3 NC 4 GND GND 8 7 6 5 VCC IN GND IXRFD630 2 VCC GND gate1 OUT Gate GND A D1 M1 + Microchip K GND DE475102N21A Out+ Drain GND GND GND GND K + + + D GND2 Gate GND2 DE475102N21A GND A Drain GND GND2 GND2 10uF + R10 + K A D Vcc=+15 V 4:20 +18 V High frequency inverter 50 kHz Dr Dr Dr Dr + 10uF 1 IN R220 7815 OUT GND2 MC7805CDTG ON Semiconductor MC7815CDTG ON Semiconductor 3 1 IN 7805 GND GND 2 2 OUT 3 +5 V 220nF 330nF Out- GND1 GND1 0.1uF AVAGO Technologies DATA Optic fibre 1 +5V HFBR-2521Z GND DATA 220nF 220nF GND1 330nF Z15 V 940C12P22K-F CDE Cornell Dubilier 10uF 4 3 2 1 + + M2 + Microchip 1 VDD VDD 2 IN OUT TC1410 OUT 3 NC 4 GND GND 8 7 6 5 VCC IN VCC GND IXRFD630 1 OUT gate2 GND GND Gate GND DE475102N21A Drain GND GND GND GND K + GND1 + + D GND1 Gate GND DE475102N21A A Drain GND GND1 In- Vcc bank capacitor of IXRFD630: - 2 tantalum capacitors of 4.7uF, MULTICOMP, CB1H475M2DCB; - 2 ceramic capacitors of 0.47uF, KEMET, C322C474M5U5TA; - 2 ceramic capacitors of 0.1uF, AVX, AR205F104K4R*; - 2 ceramic capacitors of 0.01uF, AVX, AR205F103K4R*; - 2 ceramic capacitors of 0.001uF, AVX, AR205F102K4R*. Note: modular design so that, in case of failure of a component, a card can be replaced. 13/05/2014 Other capacitors in circuit: - 10uF tantalum capacitors , AVX, TAP106M035CCS; - 100pF ceramic capacitors , AVX, AR211A101K4R; - 470pF ceramic capacitors , AVX,12067A471JAT2A. All capacitors with the same capacitance have a same reference. D - Power diodes of STMicroelectronics – STTH1512G-TR Dr - ultra-fast diodes of Vishay – BYG22D-E3/TR CLIC RF Breakdown Meeting 6 1MΩ Commercial unit: EPULSUS-PM1-10 Typical 10 kV / 62.5 A pulse waveform on a 160 Ω resistor: 26 μs width pulse and 100 Hz repetition rate. Commercial unit characteristics: • Standard galvanised steel enclosure, 800x600x400 mm, 80 kg; • Mains input 220-240 V cable supplied; • Output cable; • Output Ethernet plug for optional control available; • BNC for monitoring the output voltage pulse available; • Touch screen for programming output voltage, frequency and pulse width, and for monitoring ; • Safety interlocks and reset condition after power on • Overcurrent protection; • Series 2.2 Ω resistance for increasing overall output stability and short-circuit protection. 13/05/2014 CLIC RF Breakdown Meeting 7 Example Waveforms. Waveforms from: 1 kHz, IGBT based, modulator into a 250 pF load, using a 10 kV/180 A (3.5 kW, single phase) commercial modulator at Energy Pulse Systems. 13/05/2014 CLIC RF Breakdown Meeting 8 Estimate…. The estimated budget for a modulator, for the CLIC RF tests, is between 5000 € and 6000 €: to be confirmed when specifications are agreed upon. For this project the modulators should be supplied via Energy Pulse Systems, as materials and human capability are not available in the institute (only available for small prototypes and concept validation). With the specifications agreed and material ordered, in principle a (CE marked) modulator would be delivered in 1-2 months. Suggestion: Mike (et al.?) visit Luis, in Lisbon, for 1 day. 13/05/2014 CLIC RF Breakdown Meeting 9 Questions…. For RF BD group: a) b) c) d) e) f) g) h) Maximum capacitance to be driven ? 10 kV flattop ? In the case of no BD, 1 kHz rep-rate,? Importance of rise-fall time (given E30) ? [with such a strong dependency on field strength (e.g. 0.9930 = 0.74, 0.9830 = 0.55 and 0.930=0.04), the rise and fall times might not have a significant effect…. [But, given the same strong dependency upon E, it is important to avoid overshoot (e.g. 1.0530=4.3 and 1.0130=1.35)]]; Acceptable voltage droop during flattop (capacitive load) ?; Required “squareness” of current pulse following a breakdown ? Requirements for pulse flattop duration and flatness (e.g. dark current measurements?); Others ?? From RF BD group… 13/05/2014 CLIC RF Breakdown Meeting 10
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